Datasheet SI4463CDY-T1-GE3 - Vishay MOSFET, P CH, W/D, 20 V, 18.6 A, SO8

Vishay SI4463CDY-T1-GE3

Part Number: SI4463CDY-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P CH, W/D, 20 V, 18.6 A, SO8

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Docket:
New Product
Si4463CDY
Vishay Siliconix
P-Channel 2.5 V (G-S) MOSFET
FEATURES

Specifications:

  • Continuous Drain Current Id: -18.6 A
  • Drain Source Voltage Vds: -20 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.006 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 5 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel

RoHS: Yes

Other Names:

SI4463CDYT1GE3, SI4463CDY T1 GE3

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