Datasheet SI4288DY-T1-GE3 - Vishay MOSFET, NN CH, W/D, 40 V, 9.2 A, SO8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, NN CH, W/D, 40 V, 9.2 A, SO8

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Docket:
Si4288DY
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.020 at VGS = 10 V 0.023 at VGS = 4.5 V ID (A)a 9.2 8.6 Qg (Typ.) 4.9

Specifications:

• Continuous Drain Current Id: 9.2 A
• Drain Source Voltage Vds: 40 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.0165 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 3.1 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

SI4288DYT1GE3, SI4288DY T1 GE3