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Datasheet SI4501BDY-T1-GE3 - Vishay MOSFET, NP CH, W/D, 30V/8V, SO8

Vishay SI4501BDY-T1-GE3

Part Number: SI4501BDY-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, NP CH, W/D, 30V/8V, SO8

data sheetDownload Data Sheet

Docket:
Si4501BDY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 30 -8 RDS(on) () 0.017 at VGS = 10 V 0.020 at VGS = 4.5 V 0.027 at VGS = - 4.5 V 0.037 at VGS = - 2.5 V ID (A)a Qg (Typ.) 12 11 -8 - 6.8 7.9 16.5

Specifications:

  • Continuous Drain Current Id: 12 A
  • Drain Source Voltage Vds: 30 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.0135 Ohm
  • Operating Temperature Range: -55C to +150C
  • Power Dissipation: 4.5 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N and P Channel

RoHS: Yes

Other Names:

SI4501BDYT1GE3, SI4501BDY T1 GE3

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