Datasheet DMG8880LSS - Diodes MOSFET, N CH, W DIO, 30 V, 11.6 A, SO8

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N CH, W DIO, 30 V, 11.6 A, SO8

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Docket:
DMG8880LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
· · · · · · · Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data

Specifications:

• Continuous Drain Current Id: 11.6 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.007 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.43 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes