Datasheet DMN3115UDM - Diodes MOSFET, N CH, W ESD, 30 V, 3.2 A, SOT26

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N CH, W ESD, 30 V, 3.2 A, SOT26

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Docket:
DMN3115UDM
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
· Low On-Resistance · 60 m @ VGS = 4.5V · 80 m @ VGS = 2.5V · 130 m @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data

Specifications:

• Continuous Drain Current Id: 3.2 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 6
• On Resistance Rds(on): 0.04 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 900 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: SOT-26
• Transistor Polarity: N Channel

RoHS: Yes