Datasheet Texas Instruments UC3708DW

ManufacturerTexas Instruments
SeriesUC3708
Part NumberUC3708DW
Datasheet Texas Instruments UC3708DW

Non-Inverting High Speed Power Drivers 16-SOIC 0 to 70

Datasheets

Dual Non-Inverting Power Driver datasheet
PDF, 1.0 Mb, Revision: C, File published: Sep 25, 2007
Extract from the document

Prices

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Packaging

Pin16
Package TypeDW
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY40
CarrierTUBE
Device MarkingUC3708DW
Width (mm)7.5
Length (mm)10.3
Thickness (mm)2.35
Pitch (mm)1.27
Max Height (mm)2.65
Mechanical DataDownload

Eco Plan

RoHSCompliant

Application Notes

  • DN-35 IGBT Drive Using MOSFET Gate Drivers
    PDF, 54 Kb, File published: Sep 5, 1999
    The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices
  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, File published: Sep 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, File published: Sep 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

Model Line

Manufacturer's Classification

  • Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver
EMS supplier