RadioLocman.com Electronics ru
Advanced Search +
  

Datasheet NGTB25N120IHLWG - ON Semiconductor IGBT, 1200 V, 25 A, TO247

ON Semiconductor NGTB25N120IHLWG

Part Number: NGTB25N120IHLWG

Detailed Description

Manufacturer: ON Semiconductor

Description: IGBT, 1200 V, 25 A, TO247

data sheetDownload Data Sheet

Docket:
NGTB25N120IHLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
Features
http://onsemi.com

Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2 kV
  • Collector Emitter Voltage Vces: 1.85 V
  • DC Collector Current: 25 A
  • Number of Pins: 3
  • Operating Temperature Range: -55C to +150C
  • Power Dissipation: 250 W
  • Transistor Case Style: TO-247
  • Transistor Type: IGBT
  • RoHS: Yes
  • SVHC: No SVHC (19-Dec-2011)

Slices ↓
Radiolocman facebook Radiolocman twitter Radiolocman google plus