Datasheet VS-GB75DA120UP - Vishay IGBT MODULE, 1200 V, 75 A, SOT-227

Vishay VS-GB75DA120UP

Part Number: VS-GB75DA120UP

Detailed Description

Manufacturer: Vishay

Description: IGBT MODULE, 1200 V, 75 A, SOT-227

data sheetDownload Data Sheet

Docket:
GB75DA120UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A
FEATURES
· NPT Generation V IGBT technology · Square RBSOA · HEXFRED® low Qrr, low switching energy · Positive VCE(on) temperature coefficient · Fully isolated package

Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2 kV
  • Collector Emitter Voltage Vces: 3.3 V
  • DC Collector Current: 131 A
  • Number of Pins: 4
  • Operating Temperature Range: -40°C to +150°C
  • Power Dissipation: 658 W
  • Transistor Case Style: SOT-227
  • Transistor Polarity: NPN
  • RoHS: Yes

Other Names:

VSGB75DA120UP, VS GB75DA120UP

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