Datasheet VS-GA200TS60UPBF - Vishay IGBT MODULE, 600 V, 200 A, INT-A-PAK

Detailed Description

Manufacturer: Vishay

Description: IGBT MODULE, 600 V, 200 A, INT-A-PAK

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Docket:
GA200TS60UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
FEATURES
· Generation 4 IGBT technology · Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode · Very low conduction and switching losses · HEXFRED® antiparallel diodes with ultrasoft recovery · Industry standard package · UL approved file E78996 · Compliant to RoHS directive 2002/95/EC

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 1.74 V
• Number of Pins: 3
• Operating Temperature Range: -40°C to +150°C
• Transistor Case Style: INT-A-PAK
• Transistor Polarity: NPN
• RoHS: Yes

Other Names:

VSGA200TS60UPBF, VS GA200TS60UPBF