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Datasheet BSZ076N06NS3 G - Infineon MOSFET, N-CH, 60 V, 20 A, 8TSDSON

Infineon BSZ076N06NS3 G

Part Number: BSZ076N06NS3 G

Manufacturer: Infineon

Description: MOSFET, N-CH, 60 V, 20 A, 8TSDSON

data sheetDownload Data Sheet

BSZ076N06NS3 G
OptiMOSTM3 Power-Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type BSZ076N06NS3 G
Product Summary V DS R DS(on),max ID 60 7.6 20 V m A


  • Continuous Drain Current Id: 20 A
  • Drain Source Voltage Vds: 60 V
  • MSL: MSL 3 - 168 hours
  • Number of Pins: 8
  • On Resistance Rds(on): 0.006 Ohm
  • Operating Temperature Range: -55C to +150C
  • Power Dissipation: 69 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: PG-TSDSON
  • Transistor Polarity: N Channel
  • RoHS: Yes

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