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Datasheet SPD18P06P G - Infineon MOSFET, P-CH, 60 V, 18.6 A, TO-252

Infineon SPD18P06P G

Part Number: SPD18P06P G

Manufacturer: Infineon

Description: MOSFET, P-CH, 60 V, 18.6 A, TO-252

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SPD18P06P G SIPMOS Power-Transistor

Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175C operating temperature


  • Continuous Drain Current Id: -18.6 A
  • Drain Source Voltage Vds: -60 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 0.1 Ohm
  • Operating Temperature Range: -55C to +175C
  • Power Dissipation: 80 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Threshold Voltage Vgs Typ: -3 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: P Channel
  • RoHS: Yes

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