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Datasheet SKW07N120 - Infineon IGBT, NPT, 1200 V, 16.5 A, 125 W, TO247

Infineon SKW07N120

Part Number: SKW07N120

Manufacturer: Infineon

Description: IGBT, NPT, 1200 V, 16.5 A, 125 W, TO247

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063


  • Collector Emitter Voltage V(br)ceo: 1.2 kV
  • Collector Emitter Voltage Vces: 3.1 V
  • DC Collector Current: 16.5 A
  • Number of Pins: 3
  • Operating Temperature Range: -55C to +150C
  • Power Dissipation: 125 W
  • Pulsed Current Icm: 27 A
  • Rise Time: 31 ns
  • Transistor Case Style: TO-247
  • Transistor Type: IGBT
  • RoHS: Yes

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