Datasheet BUK962R8-60E - NXP MOSFET, N-CH, 60 V, 120 A, D2PAK

NXP BUK962R8-60E

Part Number: BUK962R8-60E

Detailed Description

Manufacturer: NXP

Description: MOSFET, N-CH, 60 V, 120 A, D2PAK

data sheetDownload Data Sheet

Docket:
BUK962R8-60E
13 July 2012
N-channel TrenchMOS logic level FET
Product data sheet
1.

Product profile

Specifications:

  • Continuous Drain Current Id: 120 A
  • Drain Source Voltage Vds: 60 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • On Resistance Rds(on): 2290µ Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 324 W
  • Rds(on) Test Voltage Vgs: 5 V
  • Threshold Voltage Vgs Typ: 1.7 V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel
  • RoHS: Y-Ex
  • SVHC: No SVHC (18-Jun-2012)

Other Names:

BUK962R860E, BUK962R8 60E

EMS supplier