Datasheet Infineon IRFP3703PBF

SMPS MOSFET PD -95481 IRFP3703PbF
HEXFET® Power MOSFET
Applications l Synchronous Rectification l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range VDSS
30V RDS(on) max
0.0028 ID
210A Max. 210 100 1000 230 3.8 1.5 ± 20 5.0 -55 to + 175 Units
A W W/°C V V/ns °C Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
­­­ 0.24 ­­­ Max.
0.65 ­­­ 40 Units
°C/W Typical SMPS Topologies
l l Forward and Bridge Converters with Synchronous Rectification for Telecom and Industrial Applications Offline High Power AC/DC Convertors using Synchronous Rectification 1
7/16/04 Notes through are on page 8 www.irf.com IRFP3703PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ­­­ ­­­ Static Drain-to-Source On-Resistance ­­­ Gate Threshold Voltage 2.0 ­­­ Drain-to-Source Leakage Current ­­­ Gate-to-Source Forward Leakage ­­­ Gate-to-Source Reverse Leakage ­­­ Typ. ­­­ 0.028 2.3 2.8 ­­­ ­­­ ­­­ ­­­ ­­­ Max. Units Conditions ­­­ V VGS = 0V, ID = 250µA ­­­ V/°C Reference to 25°C, ID = 1mA 2.8 VGS = 10V, ID = 76A m 3.9 VGS = 7.0V, ID = 76A 4.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 150 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ Typ. ­­­ 209 62 42 18 123 53 24 8250 3000 290 10360 3060 2590 Max. Units Conditions ­­­ S VDS = 24V, ID = 76A ­­­ ID = 76A ­­­ nC VDS = 24V ­­­ VGS = 10V, ­­­ VDD = 15V, VGS = 10V ­­­ ID = 76A ns ­­­ RG = 1.8 ­­­ VGS = 10V ­­­ VGS = 0V ­­­ VDS = 25V ­­­ pF = 1.0MHz ­­­ VGS = 0V, VDS = 1.0V, = 1.0MHz ­­­ VGS = 0V, VDS = …