Datasheet Texas Instruments CSD85312Q3E

ManufacturerTexas Instruments
SeriesCSD85312Q3E
Part NumberCSD85312Q3E
Datasheet Texas Instruments CSD85312Q3E

Dual 20-V N-Channel NexFET™ Power MOSFETs, CSD85312Q3E 8-VSON -55 to 150

Datasheets

Dual 20 V N-Channel NexFETв„ў Power MOSFETs, CSD85312Q3E datasheet
PDF, 1.5 Mb, File published: Nov 8, 2013
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Prices

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Packaging

Pin8
Package TypeDPA
Package QTY2500
CarrierLARGE T&R
Device Marking85312E
Width (mm)3.3
Length (mm)3.3
Thickness (mm).9
Mechanical DataDownload

Parametrics

ConfigurationDual Common Source
ID, Silicon limited at Tc=25degC39 A
IDM, Max Pulsed Drain Current(Max)76 A
PackageSON3x3 mm
QG Typ11.7 nC
QGD Typ1.6 nC
RDS(on) Typ at VGS=4.5V11.7 mOhm
Rds(on) Max at VGS=4.5V14 mOhms
VDS20 V
VGS10 V
VGSTH Typ1.1 V

Eco Plan

RoHSCompliant
Pb FreeYes

Manufacturer's Classification

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor
EMS supplier