Datasheet Texas Instruments CSD88539ND
| Manufacturer | Texas Instruments |
| Series | CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND
Datasheets
CSD88539ND, 60-V Dual N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 952 Kb, File published: Feb 10, 2014
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Status
| CSD88539ND | CSD88539NDT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
Packaging
| CSD88539ND | CSD88539NDT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | D | D |
| Industry STD Term | SOIC | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 88539N | 88539N |
| Width (mm) | 3.91 | 3.91 |
| Length (mm) | 4.9 | 4.9 |
| Thickness (mm) | 1.58 | 1.58 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 1.75 | 1.75 |
| Mechanical Data | Download | Download |
Parametrics
| Parameters / Models | CSD88539ND | CSD88539NDT |
|---|---|---|
| Configuration | Dual | Dual |
| ID, Silicon limited at Tc=25degC, A | 11.7 | 11.7 |
| IDM, Max Pulsed Drain Current(Max), A | 46 | 46 |
| Package, mm | SO-8 | SO-8 |
| QG Typ, nC | 14 | 14 |
| QGD Typ, nC | 2.3 | 2.3 |
| Rds(on) Max at VGS=10V, mOhms | 28 | 28 |
| VDS, V | 60 | 60 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 3 | 3 |
Eco Plan
| CSD88539ND | CSD88539NDT | |
|---|---|---|
| RoHS | Compliant | Compliant |
Model Line
Series: CSD88539ND (2)
Manufacturer's Classification
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor
