Datasheet Texas Instruments LF353-N

ManufacturerTexas Instruments
SeriesLF353-N
Datasheet Texas Instruments LF353-N

Wide Bandwidth Dual JFET Input Operational Amplifier

Datasheets

LF353 Wide Bandwidth Dual JFET Input Operational Amplifier datasheet
PDF, 1.0 Mb, Revision: F, File published: Mar 25, 2013
Extract from the document

Prices

Status

LF353MLF353M/NOPBLF353MXLF353MX/NOPBLF353N/NOPB
Lifecycle StatusNRND (Not recommended for new designs)Active (Recommended for new designs)NRND (Not recommended for new designs)Active (Recommended for new designs)Active (Recommended for new designs)
Manufacture's Sample AvailabilityYesNoYesNoYes

Packaging

LF353MLF353M/NOPBLF353MXLF353MX/NOPBLF353N/NOPB
N12345
Pin88888
Package TypeDDDDP
Industry STD TermSOICSOICSOICSOICPDIP
JEDEC CodeR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDIP-T
Package QTY95952500250040
CarrierTUBETUBELARGE T&RLARGE T&RTUBE
Device MarkingLF353MLF353LF353LF
Width (mm)3.913.913.913.916.35
Length (mm)4.94.94.94.99.81
Thickness (mm)1.581.581.581.583.9
Pitch (mm)1.271.271.271.272.54
Max Height (mm)1.751.751.751.755.08
Mechanical DataDownloadDownloadDownloadDownloadDownload

Parametrics

Parameters / ModelsLF353M
LF353M
LF353M/NOPB
LF353M/NOPB
LF353MX
LF353MX
LF353MX/NOPB
LF353MX/NOPB
LF353N/NOPB
LF353N/NOPB
Additional FeaturesN/AN/AN/AN/AN/A
ArchitectureFETFETFETFETFET
CMRR(Min), dB7070707070
CMRR(Typ), dB100100100100100
GBW(Typ), MHz44444
Input Bias Current(Max), pA200200200200200
Iq per channel(Max), mA3.253.253.253.253.25
Iq per channel(Typ), mA1.81.81.81.81.8
Number of Channels22222
Offset Drift(Typ), uV/C1010101010
Operating Temperature Range, C0 to 700 to 700 to 700 to 700 to 70
Output Current(Typ), mA2020202020
Package GroupSOICSOICSOICSOICPDIP
Package Size: mm2:W x L, PKG8SOIC: 29 mm2: 6 x 4.9(SOIC)8SOIC: 29 mm2: 6 x 4.9(SOIC)8SOIC: 29 mm2: 6 x 4.9(SOIC)8SOIC: 29 mm2: 6 x 4.9(SOIC)See datasheet (PDIP)
Rail-to-RailIn to V+In to V+In to V+In to V+In to V+
RatingCatalogCatalogCatalogCatalogCatalog
Slew Rate(Typ), V/us1313131313
Total Supply Voltage(Max), +5V=5, +/-5V=103636363636
Total Supply Voltage(Min), +5V=5, +/-5V=101010101010
Vn at 1kHz(Typ), nV/rtHz1616161616
Vos (Offset Voltage @ 25C)(Max), mV1010101010

Eco Plan

LF353MLF353M/NOPBLF353MXLF353MX/NOPBLF353N/NOPB
RoHSSee ti.comCompliantSee ti.comCompliantCompliant

Application Notes

  • AN-447 Protection Schemes for BI-FET Amplifiers and Switches
    PDF, 80 Kb, File published: May 2, 2004
    Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches
  • AN-262 Applying Dual and Quad FET Op Amps (Rev. B)
    PDF, 1.1 Mb, Revision: B, File published: May 6, 2013
    The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab
  • AN-263 Sine Wave Generation Techniques (Rev. C)
    PDF, 747 Kb, Revision: C, File published: Apr 22, 2013
    This application note describes the sine wave generation techniques to control frequency amplitude anddistortion levels.
  • AN-256 Circuitry for Inexpensive Relative Humidity Measurement (Rev. B)
    PDF, 262 Kb, Revision: B, File published: May 6, 2013
    Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor
  • Get More Power Out of Dual or Quad Op-Amps
    PDF, 91 Kb, File published: Oct 2, 2002

Model Line

Manufacturer's Classification

  • Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps
EMS supplier