RadioLocman.com Electronics ru
Advanced Search +
  

Datasheet Vishay SI2342DS-T1-GE3

ManufacturerVishay
SeriesSi2342DS
Part NumberSI2342DS-T1-GE3

N-Channel 8 V (D-S) MOSFET

Datasheets

  • Download » Datasheet PDF, 252 Kb
    Si2342DS
    Docket ↓
    New Product Si2342DS
    Vishay Siliconix N-Channel 8 V (D-S) MOSFET
    FEATURES
    PRODUCT SUMMARY
    RDS(on) (пЃ—) ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 Halogen-free According to IEC 61249-2-21
    Definition TrenchFETВ® Power MOSFET Low On-Resistance 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 6 nC APPLICATIONS Load Switches for Low Voltage Gate Drive Low Voltage Operating Circuits
    -Gate Drive 1.2 V to 5 V SOT-23 G 1 D
    3
    S (3) D
    Marking Code 2 F2 XXX
    Lot Traceability
    and Date Code Top View G
    (1) Part # Code (2)
    S
    N-Channel MOSFET Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 В°C, unless otherwise noted)
    Parameter Symbol Limit Drain-Source Voltage VDS 8 Gate-Source Voltage VGS В±5 TC = 70 В°C ID TA = 25 В°C 6e, b, c
    5.8b, c
    30 TA = 70 В°C
    Pulsed Drain Current (t = 300 Вµs) IDM
    TC = 25 В°C Continuous Source-Drain Diode Current 1.1b, c
    2.5 TC = 25 В°C
    TC = 70 В°C Maximum Power Dissipation 1.6 PD TA = 25 В°C W 1.3b, c
    0.8b, c ...

Prices

Moldel Line

Series: Si2342DS (1)
  • SI2342DS-T1-GE3

Manufacturer's Classification

  • MOSFETs

Other Names:

SI2342DST1GE3, SI2342DS T1 GE3

Slices ↓
Radiolocman facebook Radiolocman twitter Radiolocman google plus