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Datasheet IRF6609TR1 - International Rectifier MOSFET, N, DIRECTFET, MT

International Rectifier IRF6609TR1

Part Number: IRF6609TR1

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MT

data sheetDownload Data Sheet

Docket:
HEXFET« Power MOSFET
Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
IRF6609
Qg

Simulation ModelSimulation Model

Specifications:

  • Capacitance Ciss Typ: 6290 pF
  • Charge Qrr @ Tj = 25┬░C Typ: 26nC
  • Continuous Drain Current Id: 150 A
  • Current Temperature: 25░C
  • Drain Source Voltage Vds: 20 V
  • External Depth: 6.35 mm
  • External Length / Height: 0.7 mm
  • External Width: 5.05 mm
  • Full Power Rating Temperature: 25░C
  • IC Package (Case style): MT
  • Junction Temperature Tj Max: 150░C
  • Junction Temperature Tj Min: -40░C
  • Mounting Type: SMD
  • Number of Pins: 7
  • Number of Transistors: 1
  • On Resistance Rds(on): 2 MOhm
  • On State Resistance Max: 2 MOhm
  • Package / Case: MT
  • Power Dissipation Pd: 2.8 W
  • Pulse Current Idm: 250 A
  • Reverse Recovery Time trr Typ: 32 ns
  • SMD Marking: 6609
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 2.45 V
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vds: 20 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2.45 V
  • Voltage Vgs th Min: 1.55 V

RoHS: Yes

Accessories:

  • International Rectifier - IRF6609TR1PBF
  • LICEFA - V11-7

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