Datasheet IRF6609TR1 - International Rectifier MOSFET, N, DIRECTFET, MT
Part Number: IRF6609TR1
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, N, DIRECTFET, MT
Docket:
HEXFET® Power MOSFET
Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
IRF6609
Qg
Specifications:
- Capacitance Ciss Typ: 6290 pF
- Charge Qrr @ Tj = 25В°C Typ: 26nC
- Continuous Drain Current Id: 150 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 20 V
- External Depth: 6.35 mm
- External Length / Height: 0.7 mm
- External Width: 5.05 mm
- Full Power Rating Temperature: 25°C
- IC Package (Case style): MT
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -40°C
- Mounting Type: SMD
- Number of Pins: 7
- Number of Transistors: 1
- On Resistance Rds(on): 2 MOhm
- On State Resistance Max: 2 MOhm
- Package / Case: MT
- Power Dissipation Pd: 2.8 W
- Pulse Current Idm: 250 A
- Reverse Recovery Time trr Typ: 32 ns
- SMD Marking: 6609
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 2.45 V
- Transistor Polarity: N Channel
- Voltage Vds Typ: 20 V
- Voltage Vds: 20 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 2.45 V
- Voltage Vgs th Min: 1.55 V
RoHS: Yes
Accessories:
- International Rectifier - IRF6609TR1PBF
- LICEFA - V11-7