Datasheet IRF6612TR1 - International Rectifier MOSFET, N, DIRECTFET, MX

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MX

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Docket:
PD - 95842E
IRF6612/IRF6612TR1
RoHS compliant containing no lead or bromide Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques
l l
DirectFETTM Power MOSFET

Simulation Model

Specifications:

• Capacitance Ciss Typ: 3970 pF
• Continuous Drain Current Id: 24 A
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• On Resistance Rds(on): 3.3 MOhm
• Package / Case: MX
• Power Dissipation Pd: 2.8 W
• Pulse Current Idm: 190 A
• Reverse Recovery Time trr Typ: 19 ns
• SMD Marking: 6612
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.25 V
• Transistor Case Style: MX
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7