Datasheet IRF6618TR1 - International Rectifier MOSFET, N, DIRECTFET, MT
Part Number: IRF6618TR1
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, N, DIRECTFET, MT
Docket:
IRF6618/IRF6618TR1
RoHS compliant containing no lead or bromide Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l l
PD - 94726H
HEXFET® Power MOSFET
Specifications:
- Capacitance Ciss Typ: 5640 pF
- Charge Qrr @ Tj = 25В°C Typ: 46nC
- Continuous Drain Current Id: 170 A
- Current Id Max: 30 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 30 V
- External Depth: 6.35 mm
- External Length / Height: 0.7 mm
- External Width: 5.05 mm
- Full Power Rating Temperature: 25°C
- IC Package (Case style): MT
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -40°C
- Mounting Type: SMD
- Number of Pins: 7
- Number of Transistors: 1
- On Resistance Rds(on): 2.2 MOhm
- On State Resistance Max: 2.2 MOhm
- Operating Temperature Range: -40°C to +150°C
- Package / Case: MT
- Power Dissipation Pd: 2.8 W
- Pulse Current Idm: 240 A
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Typ: 43 ns
- SMD Marking: 6618
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 1.64 V
- Transistor Case Style: DirectFET MT
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vds: 30 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 2.35 V
RoHS: Yes