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Datasheet IRF6618TR1 - International Rectifier MOSFET, N, DIRECTFET, MT

International Rectifier IRF6618TR1

Part Number: IRF6618TR1

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MT

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Docket:
IRF6618/IRF6618TR1
RoHS compliant containing no lead or bromide Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l l
PD - 94726H
HEXFET® Power MOSFET

Simulation ModelSimulation Model

Specifications:

  • Capacitance Ciss Typ: 5640 pF
  • Charge Qrr @ Tj = 25В°C Typ: 46nC
  • Continuous Drain Current Id: 170 A
  • Current Id Max: 30 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • External Depth: 6.35 mm
  • External Length / Height: 0.7 mm
  • External Width: 5.05 mm
  • Full Power Rating Temperature: 25°C
  • IC Package (Case style): MT
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -40°C
  • Mounting Type: SMD
  • Number of Pins: 7
  • Number of Transistors: 1
  • On Resistance Rds(on): 2.2 MOhm
  • On State Resistance Max: 2.2 MOhm
  • Operating Temperature Range: -40°C to +150°C
  • Package / Case: MT
  • Power Dissipation Pd: 2.8 W
  • Pulse Current Idm: 240 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Typ: 43 ns
  • SMD Marking: 6618
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 1.64 V
  • Transistor Case Style: DirectFET MT
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vds: 30 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2.35 V

RoHS: Yes

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