Datasheet IRF6613TR1 - International Rectifier MOSFET, N, DIRECTFET, MT
Part Number: IRF6613TR1
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, N, DIRECTFET, MT
Docket:
PD - 95881B
IRF6613
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Application Specific MOSFETs Ideal for Synchronous Rectification in Isolated DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
HEXFET® Power MOSFET
Specifications:
- Capacitance Ciss Typ: 5950 pF
- Continuous Drain Current Id: 23 A
- Drain Source Voltage Vds: 40 V
- External Depth: 6.35 mm
- External Length / Height: 0.7 mm
- External Width: 5.05 mm
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -40°C
- Mounting Type: SMD
- On Resistance Rds(on): 3.4 MOhm
- Package / Case: MT
- Power Dissipation Pd: 2.8 W
- Pulse Current Idm: 180 A
- Reverse Recovery Time trr Typ: 38 ns
- SMD Marking: 6613
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 2.25 V
- Transistor Polarity: N Channel
- Voltage Vds Typ: 40 V
- Voltage Vds: 40 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- LICEFA - V11-7-6-10
- LICEFA - V11-7