Datasheet IRF6613TR1 - International Rectifier MOSFET, N, DIRECTFET, MT

Part Number: IRF6613TR1

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MT

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Docket:
PD - 95881B
IRF6613
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Application Specific MOSFETs Ideal for Synchronous Rectification in Isolated DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
HEXFET® Power MOSFET

Simulation ModelSimulation Model

Specifications:

  • Capacitance Ciss Typ: 5950 pF
  • Continuous Drain Current Id: 23 A
  • Drain Source Voltage Vds: 40 V
  • External Depth: 6.35 mm
  • External Length / Height: 0.7 mm
  • External Width: 5.05 mm
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -40°C
  • Mounting Type: SMD
  • On Resistance Rds(on): 3.4 MOhm
  • Package / Case: MT
  • Power Dissipation Pd: 2.8 W
  • Pulse Current Idm: 180 A
  • Reverse Recovery Time trr Typ: 38 ns
  • SMD Marking: 6613
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 2.25 V
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 40 V
  • Voltage Vds: 40 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • LICEFA - V11-7-6-10
  • LICEFA - V11-7

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