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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT
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PD-91621C IRG4PH40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-247AC package UltraFast CoPack IGBT
C VCES = 1200V
VCE(on) typ. = 2.43V G @VGE = 15V, IC = 21A E n-channel Benefits Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing TO-247AC Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C …
