Datasheet Microchip TN0106N3-G

Supertex inc. TN0106 N-Channel Enhancement-Mode
Vertical DMOS FET
General Description Features
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown. Low threshold -2.0V max.
High input impedance
Low input capacitance -50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown …