Datasheet Microchip TN0106N3-G-P003
Manufacturer | Microchip |
Series | TN0106 |
Part Number | TN0106N3-G-P003 |
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process
Datasheets
TN0106 Datasheet - N-Channel Enhancement-Mode Vertical DMOS FET
PDF, 616 Kb, Revision: 06-27-2014
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Prices
Status
Lifecycle Status | Production (Appropriate for new designs but newer alternatives may exist) |
Packaging
Package | TO-92 |
Pins | 3 |
Parametrics
BVdss min | 60 V |
CISSmax | 60 pF |
Operating Temperature Range | -55 to +150 °C |
Rds | 3.0 on) max |
Vgs(th) max | 2.0 V |
Eco Plan
RoHS | Compliant |
Model Line
Series: TN0106 (3)
- TN0106N3-G TN0106N3-G-P003 TN0106N3-G-P013
Other Names:
TN0106N3GP003, TN0106N3 G P003