Datasheet Microchip TN5335N8-G
| Manufacturer | Microchip | 
| Series | TN5335 | 
| Part Number | TN5335N8-G | 
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process
Datasheets
TN5335 Datasheet - N-Channel Enhancement-Mode Vertical DMOS FET
PDF, 669 Kb, Revision: 06-27-2014
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Status
| Lifecycle Status | Production (Appropriate for new designs but newer alternatives may exist) | 
Packaging
| Package | SOT-89 | 
| Pins | 3 | 
Parametrics
| BVdss min | 350 V | 
| CISSmax | 110 pF | 
| Operating Temperature Range | -55 to +150 °C | 
| Rds | 15 on) max | 
| Vgs(th) max | 2.0 V | 
Eco Plan
| RoHS | Compliant | 
Model Line
Series: TN5335 (2)
- TN5335K1-G TN5335N8-G
 
Other Names:
TN5335N8G, TN5335N8 G