Datasheet Intersil HCS00MS

DATASHEET
HCS00MS FN2138
Rev 2.00
August 1995 Radiation Hardened Quad 2-Input NAND Gate Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day
(Typ) Latch-Up Free Under Any Conditions Military Temperature Range: -55oC to +125oC A1 1 14 VCC B1 2 13 B4 Y1 3 12 A4 A2 4 11 Y4 B2 5 10 B3 Y2 6 9 A3 GND 7 8 Y3 Significant Power Reduction Compared to LSTTL ICs
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14
TOP VIEW Input Logic Levels
-VIL = 30% of VCC Max
-VIH = 70% of VCC Min Input Current Levels Ii п‚Ј 5пЃ­A at VOL, VOH Description
The Intersil HCS00MS is a Radiation Hardened Quad 2Input NAND Gate. A high on both inputs forces the output to
a Low state. A1 1 14 VCC B1 2 13 B4 Y1 3 12 A4 A2 4 11 Y4 B2 5 10 B3 Y2 6 9 A3 GND 7 8 Y3 The HCS00MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS00MS is supplied in a 14 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix). Ordering Information
PART
NUMBER TEMPERATURE
RANGE SCREENING …