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Datasheet Vishay Si4490DY

ManufacturerVishay
SeriesSi4490DY

N-Channel 200-V (D-S) MOSFET

Datasheets

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    Si4490DY
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    Si4490DY
    Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
    VDS (V)
    200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 Halogen-free According to IEC 61249-2-21
    Definition TrenchFET® Power MOSFETs Compliant to RoHS Directive 2002/95/EC D SO-8
    S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4490DY-T1-E3 (Lead (Pb)-free)
    Si4490DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
    Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C
    TA = 70 °C Pulsed Drain Current
    Avalanch Current L = 0.1 mH Continuous Source Current (Diode Conduction)a
    Maximum Power Dissipationa ID TA = 25 °C
    TA = 70 °C 4.0 2.3 IAS 15 A 2.6 1.3 3.1 1.56 2.0 1.0 TJ, Tstg Operating Junction and Storage Temperature Range 2.85
    40 PD V 3.2 IDM
    IS Unit -55 to 150 W
    °C THERMAL RESISTANCE RATINGS
    Parameter
    Maximum Junction-to-Ambienta
    Maximum Junction-to-Foot (Drain) Symbol
    t ≤ 10 s
    Steady State
    Steady State RthJA
    RthJF Typical Maximum 33 40 65 80 17 21 Unit
    °C/W Notes: ...

Prices

Packaging

SI4490DY-T1-E3SI4490DY-T1-GE3
PackageSOIC-8 (Narrow)SOIC-8 (Narrow)

Moldel Line

Series: Si4490DY (2)

Manufacturer's Classification

  • MOSFETs

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