Datasheet Texas Instruments LMG1210RVRR

ManufacturerTexas Instruments
SeriesLMG1210
Part NumberLMG1210RVRR
Datasheet Texas Instruments LMG1210RVRR

200V, 1.5A/3A Half Bridge GaN Driver With Adjustable Dead-time 19-WQFN -40 to 125

Datasheets

LMG1210 200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time datasheet
PDF, 596 Kb, File published: Feb 14, 2018
Extract from the document

Prices

Status

Lifecycle StatusPreview (Device has been announced but is not in production. Samples may or may not be available)
Manufacture's Sample AvailabilityNo

Packaging

Pin19
Package TypeRVR
Package QTY3000
CarrierLARGE T&R
Width (mm)4
Length (mm)3
Thickness (mm)0.75
Mechanical DataDownload

Parametrics

Bus Voltage200 V
Driver ConfigurationHalf Bridge
Fall Time0.5 ns
Input ThresholdTTL
Input VCC(Max)18 V
Input VCC(Min)6 V
Number of Channels2
Operating Temperature Range-40 to 125 C
Package GroupWQFN
Package Size: mm2:W x L19WQFN: 12 mm2: 4 x 3(WQFN) PKG
Peak Output Current3 A
Power SwitchMOSFET,GaNFET
Prop Delay10 ns
RatingCatalog
Rise Time0.5 ns

Eco Plan

RoHSSee ti.com

Design Kits & Evaluation Modules

  • Evaluation Modules & Boards: LMG1210EVM-012
    LMG1210 Half-bridge Open Loop Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)

Application Notes

  • Optimizing Efficiency Through Dead Time Control With the LMG1210 GaN Driver
    PDF, 139 Kb, File published: Feb 14, 2018
    Dead time is an extremely important design parameter in some high-frequency converters using GaN.Dead time becomes ever more important as the frequency of operation increases. This reportdemonstrates the need for dead time optimization by measuring efficiency of a converter with varyingdead times. This report also discusses the various sources of propagation delay mismatch which causedead

Model Line

Series: LMG1210 (3)

Manufacturer's Classification

  • Semiconductors > Power Management > Gallium Nitride (GaN) Solutions > GaN FET Drivers
EMS supplier