Datasheet Texas Instruments LMG1210

ManufacturerTexas Instruments
SeriesLMG1210
Datasheet Texas Instruments LMG1210

200V, 1.5A/3A Half Bridge GaN Driver With Adjustable Dead-time

Datasheets

LMG1210 200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time datasheet
PDF, 596 Kb, File published: Feb 14, 2018
Extract from the document

Prices

Status

LMG1210RVRRLMG1210RVRTXLMG1210RVRT
Lifecycle StatusPreview (Device has been announced but is not in production. Samples may or may not be available)Preview (Device has been announced but is not in production. Samples may or may not be available)Active (Recommended for new designs)
Manufacture's Sample AvailabilityNoNoYes

Packaging

LMG1210RVRRLMG1210RVRTXLMG1210RVRT
N123
Pin191919
Package TypeRVRRVRRVR
Package QTY3000250250
CarrierLARGE T&RSMALL T&RSMALL T&R
Width (mm)444
Length (mm)333
Thickness (mm)0.750.750.75
Mechanical DataDownloadDownloadDownload

Parametrics

Parameters / ModelsLMG1210RVRR
LMG1210RVRR
LMG1210RVRT
LMG1210RVRT
XLMG1210RVRT
XLMG1210RVRT
Bus Voltage, V200200200
Driver ConfigurationHalf BridgeHalf BridgeHalf Bridge
Fall Time, ns0.50.50.5
Input ThresholdTTLTTLTTL
Input VCC(Max), V181818
Input VCC(Min), V666
Number of Channels222
Operating Temperature Range, C-40 to 125-40 to 125-40 to 125
Package GroupWQFNWQFNWQFN
Package Size: mm2:W x L, PKG19WQFN: 12 mm2: 4 x 3(WQFN)19WQFN: 12 mm2: 4 x 3(WQFN)19WQFN: 12 mm2: 4 x 3(WQFN)
Peak Output Current, A333
Power SwitchMOSFET,GaNFETMOSFET,GaNFETMOSFET,GaNFET
Prop Delay, ns101010
RatingCatalogCatalogCatalog
Rise Time, ns0.50.50.5

Eco Plan

LMG1210RVRRLMG1210RVRTXLMG1210RVRT
RoHSSee ti.comSee ti.comSee ti.com

Application Notes

  • Optimizing Efficiency Through Dead Time Control With the LMG1210 GaN Driver
    PDF, 139 Kb, File published: Feb 14, 2018
    Dead time is an extremely important design parameter in some high-frequency converters using GaN.Dead time becomes ever more important as the frequency of operation increases. This reportdemonstrates the need for dead time optimization by measuring efficiency of a converter with varyingdead times. This report also discusses the various sources of propagation delay mismatch which causedead

Model Line

Manufacturer's Classification

  • Semiconductors > Power Management > Gallium Nitride (GaN) Solutions > GaN FET Drivers
EMS supplier