Datasheet Toshiba TPH1R104PB

ManufacturerToshiba
SeriesTPH1R104PB
Part NumberTPH1R104PB

Power MOSFET (N-ch single 30V<VDSS≤60V)

Datasheets

TPH1R104PB Data sheet/English
PDF, 591 Kb, File uploaded: May 2, 2018
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Prices

Status

Lifecycle StatusActive (Recommended for new designs)

Packaging

Manufacture Package CodeSOP Advance(WF)

Parametrics

AEC-Q101Conform
Application ScopeDC-DC Converters / Automotive / Motor Drivers / Load Switches
Assembly basesJapan
Drain-Source on-resistance (Max) [|VGS|=10V]0.00114 Ω
Drain-Source on-resistance (Max) [|VGS|=6V]0.00196 Ω
GenerationU-MOSⅨ-H
Input capacitance (Typ.)4560 pF
PolarityN-ch
Total gate charge (Typ.)55 nC

Eco Plan

RoHSCompliant

Manufacturer's Classification

  • MOSFET
EMS supplier