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PD -96030 IRF9540NSPbF
IRF9540NLPbF HEXFETВ® Power MOSFET
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Ultra Low On-Resistance
150В°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from
IRF9540NS/L
P-Channel
Lead-Free D RDS(on) = 117mΩ G Description
Features of this design are a 150В°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications. VDSS = -100V ID = -23A S D D G D S …
