Datasheet Analog Devices HMC1022A

HMC1022A
v01.1215 Typical Applications Features The HMC1022A is ideal for: High P1dB Output Power: 22 dBm Test Instrumentation High Psat Output Power: 24 dBm Microwave Radio & VSAT High Gain: 12 dB Military & Space High Output IP3: 32 dBm Telecom Infrastructure Supply Voltage: +10 V @ 150 mA Fiber Optics 50 Ohm Matched Input/Output y Die Size: 2.82 x 1.50 x 0.1 mm General Description im in
ar Functional Diagram Pr
el Amplifiers -Linear & Power -Chip GaAs pHEMT MMIC
0.25 WATT POWER AMPLIFIER, DC -48 GHz The HMC1022A is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC
and 48 GHz. The amplifier provides 12 dB of gain,
32 dBm output IP3 and +22 dBm of output power at
1 dB gain compression while requiring 150 mA from
a +10 V supply. The HMC1022A exhibits a slightly
positive gain slope from 10 to 35 GHz, making
it ideal for EW, ECM, Radar and test equipment
applications. The HMC1022A amplifier I/Os are
internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25В° C, Vdd = +10 V, Vgg2 = +4.5 V, Idd = 150 mA [1]
Parameter Min. Frequency Range
Gain Typ. Max. Min. DC -16
9.5 11.5 Typ. Max. Min. 16 -36
9.5 12 Typ.
36 -48 9.5 Max. Units
GHz 11.5 dB Gain Flatness В±0.5 В±0.3 В±1.1 dB Gain Variation Over Temperature 0.012 0.018 0.041 dB/ В°C
dB Input Return Loss 18 16 15 Output Return Loss 28 22 18 dB 19 dBm 23.5 21 dBm Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat) 20 22 …