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Power MOSFET in TO-220 package
Extract from the document
IRF9610
www.vishay.com Vishay Siliconix Power MOSFET
FEATURES S • Dynamic dV/dt rating TO-220AB Available • P-channel
• Fast switching G Available • Ease of paralleling
• Simple drive requirements
G D S • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 D Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details P-Channel MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) -200
VGS = -10 V
11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration DESCRIPTION 3.0 Qg max. (nC) The power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness. Single The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry. ORDERING INFORMATION …
