Datasheet Toshiba SSM6N813R
| Manufacturer | Toshiba |
| Series | SSM6N813R |
| Part Number | SSM6N813R |
Small-signal MOSFET 2 in 1
Datasheets
SSM6N813R Data sheet/English
PDF, 440 Kb, Language: en, File published: Sep, 2018
Extract from the document
Prices
Status
| Lifecycle Status | Active (Recommended for new designs) |
Packaging
| Manufacture Package Code | TSOP6F |
Parametrics
| Application Scope | Power Management Switches |
| Assembly bases | Thailand |
| Component Product (Q1) | SSM6N813R |
| Component Product (Q2) | SSM6N813R |
| Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=10V] | 112 mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=4.5V] | 154 mΩ |
| Gate threshold voltage (Q1/Q2) (Max) | 2.5 V |
| Generation | U-MOSⅧ-H |
| Input capacitance (Q1/Q2) (Typ.) | 242 pF |
| Internal Connection | Independent |
| Polarity | N-ch×2 |
| Total gate charge (Q1/Q2) (Typ.) [VGS=4.5V] | 3.6 nC |
Eco Plan
| RoHS | Compliant |
Model Line
Series: SSM6N813R (3)
- SSM6N813R SSM6N813R,LF SSM6N813R,LXGF
Manufacturer's Classification
- MOSFETs
