Datasheet Diodes DGTD65T50S1PT
| Manufacturer | Diodes |
| Series | DGTD65T50S1PT |
| Part Number | DGTD65T50S1PT |
650V Field Stop IGBT
Datasheets
Datasheet DGTD65T50S1PT
PDF, 1.7 Mb, Language: en, File uploaded: Mar 26, 2019, Pages: 9
650V Field Stop IGBT
650V Field Stop IGBT
Extract from the document
Parametrics
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 100 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 375 W |
| Input Type | Standard |
| Gate Charge | 287 nC |
| Reverse Recovery Time (trr) | 80 ns |
| Operating Temperature | -40~175 °C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 ![]() |
| Product Status | Obsolete |
| Packaging | Tube |
Packaging
| Package | TO247 (Type MC) |
Parametrics
| Anti Parallel Diode | Yes |
| EOFF typ @ +25°C | 0.55 mJ |
| EON typ @ +25°C | 0.77 mJ |
| IC @ +100°C | 50 A |
| IC @ +25°C | 100 A |
| Power Dissipation @ TC = +25°C | 375 W |
| Short Circuit | 5 µs |
| VCE(sat) max @ +25°C | 2.4 V |
| VCE(sat) typ @ +25°C | 1.85 V |
| VCES | 650 V |
Manufacturer's Classification
- Discrete > IGBTs
