Datasheet Nexperia GAN063-650WSA

Datasheet Nexperia GAN063-650WSA

650 V, 50 mΩ Gallium Nitride (GaN) FET


Datasheet GAN063-650WSA
PDF, 289 Kb, Language: en, Revision: 27112019, File uploaded: Dec 5, 2019, Pages: 12
650 V, 50 mΩ Gallium Nitride (GaN) FET
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Detailed Description

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET.

It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. AEC-Q101 qualified.

Model Line

Series: GAN063-650WSA (1)
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