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1700V SiC N-Channel MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...- 1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package The JX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...
- 3300V SiC N-Channel MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...
- 70V Parallelable 4-Switch Buck-Boost Controller with Inductor DCR Current Sensing The LTC7878 is a high performance buck-boost switching regulator controller that operates from an input voltage above, below or equal to the output voltage. The ...
- PWM Controller The SG3525A PWM Controller offers improved performance and lower external parts count when implemented for controlling all types of switching power supplies. The on-chip +5.1 V reference is trimmed to +/-1% and the error amplifier ...
8A Field Plated SBR Field Plated Super Barrier Rectifier in PowerDI-5 package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...
3A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...- 2A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package This field plated Super Barrier Rectifier (SBR FP) diode is ideally suited for application requiring ultra-low blocking mode. Leading to lower operating temperatures and ...
2A Field Plated SBR Field Plated Super Barrier Rectifier in PowerDI123 package This Super Barrier Rectifier (SBR ) diode is ideally suited for applications requiring ultra-low blocking mode. Leading to lower operation temperatures and increased ...
Miniature Relay 2 Poles-1 to 2 A for Signal Switching
650V N-Channel MOSFET in TO247-4 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...- 650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
- 650V N-Channel MOSFET in TO247-3 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ...
800 W Internally pre-matched GaN HEMT in SOT-1214B package The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz. Parameter Value Manufacturer Ampleon Type RF GaN ...
BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC in 32-VQFN (5x5) package
30A, 150V, Automotive Planar Schottky in TO-220AB package- 30A, 100V, Automotive Planar Schottky in TO-220AB package
- 30A, 90V, Automotive Planar Schottky in TO-220AB package
- 30A, 50V, Automotive Planar Schottky in TO-220AB package
- 30A, 45V, Automotive Planar Schottky in TO-220AB package