Datasheet Analog Devices HMC637A

HMC637A
v01.0715 AMPLIFIERS -LINEAR & POWER -CHIP GaAs MMIC 1 WATT
POWER AMPLIFIER DC -6 GHz
Typical Applications Features The HMC637A is ideal for: P1dB Output Power: +30.5 dBm • Telecom Infrastructure Gain: 14 dB • Microwave Radio & VSAT Output IP3: +41 dBm • Military & Space Bias Supplies: +12V, +6V, -1V • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 2.98 x 2.48 x 0.1 mm Functional Diagram General Description
The HMC637A is a GaAs MMIC MESFET Distributed
Power Amplifier die which operates between DC and
6 GHz. The amplifier provides 14 dB of gain,
+41 dBm output IP3 and +30.5 dBm of output power
at 1 dB gain compression while requiring 400mA
from a +12V supply. Gain flatness is excellent at ±0.5
dB from DC to 6 GHz making the HMC637A ideal for
EW, ECM, Radar and test equipment applications.
The HMC637A amplifier I/Os are internally matched
to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +6V, Idd= 400mA[1]
Frequency Min. Typ. Gain Parameter DC -6.0 GHz 11 14 Gain Flatness DC -6.0 GHz ±0.5 dB Gain Variation Over Temperature DC -6.0 GHz 0.008 dB/ °C Units dB dB Input Return Loss DC -6.0 GHz 14 Output Return Loss DC -6.0 GHz 18 dB Output Power for 1 dB Compression (P1dB) DC -6.0 GHz 30.5 dBm Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure [2] DC -6.0 GHz 31.5 dBm DC -6.0 GHz 43 dBm DC -2 GHz
2.0 -6.0 GHz 12
4 dB
dB 400 mA Supply Current (Idd) 1 Max. [1] Adjust Vgg1 between -2V to 0V to achieve Idd= 400mA typical. [2] Two-Tone Output Power = 0dBm Per Tone , 1 MHz Spacing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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