Datasheet STMicroelectronics MASTERGAN4TR

ManufacturerSTMicroelectronics
SeriesMASTERGAN4
Part NumberMASTERGAN4TR

High power density 600V half-bridge driver with two enhancement mode GaN HEMT

Datasheets

Datasheet MASTERGAN4
PDF, 480 Kb, Language: en, File uploaded: Apr 15, 2021, Pages: 27
High power density 600V half-bridge driver with two enhancement mode GaN HEMT
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Detailed Description

All features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 225 mΩ
    • IDS(MAX) = 6.5 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shut down functionality

Status

Lifecycle StatusActive (Recommended for new designs)

Packaging

PackageVFQFPN 9X9X1.0 31L PITCH 0.6MM

Model Line

Series: MASTERGAN4 (2)

Manufacturer's Classification

  • Power Management > Gate Drivers > High Voltage Half Bridge Gate Drivers
EMS supplier