Datasheet UnitedSiC UF3C120150B7S

Part NumberUF3C120150B7S
Datasheet UnitedSiC UF3C120150B7S

1200V-150mW SiC Cascode


Datasheet UF3C120150B7S
PDF, 420 Kb, Language: en, File uploaded: Jun 10, 2021, Pages: 10
1200V-150mW SiC Cascode
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Detailed Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

Manufacturer's Classification

  • SiC FETs

1-4 Layer PCBs $2