Datasheet ON Semiconductor MTP3N60E

ManufacturerON Semiconductor
SeriesMTP3N60E

TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate

Datasheets

Datasheet MTP3N60E
PDF, 292 Kb, Language: en, File uploaded: Sep 27, 2022, Pages: 9
TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate
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Detailed Description

This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain −to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

Model Line

Series: MTP3N60E (1)

Manufacturer's Classification

  • Discretes & Drivers > MOSFETs