Features Applications n 600 V, 30 A, Low Collector-Emitter n Switch-Mode Power Supplies (SMPS) Saturation Voltage (VCE(sat)
n Advanced trench-gate field-stop
technology
n Low switching loss
n Fast switching
n RoHS compliant* n Uninterruptible Power Sources (UPS)
n Power Factor Correction (PFC)
n Induction heating BIDNW30N60H3 Insulated Gate Bipolar Transistor (IGBT)
General Information Additional Information The Bourns Model BIDNW30N60H3 IGBT device combines technology from a MOS
gate and a bipolar transistor, resulting in an optimum component for high voltage and
high current applications. This device uses Trench-Gate Field-Stop technology providing
greater control of dynamic characteristics while resulting in a lower Collector-Emitter
Saturation Voltage (VCE(sat) and fewer switching losses.
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SELECTOR LIBRARY CONTACT Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified)
Parameter Collector-Emitter Voltage Symbol Value Unit VCES 600 V Continuous Collector Current (TC = 25 °C), limited by Tjmax IC 60 A Continuous Collector Current (TC = 100 °C), limited by Tjmax IC 30 A Pulsed Collector Current, tp limited by Tjmax ICP 120 A Gate-Emitter Voltage VGE ±20 V IF 12 A Total Power Dissipation Ptotal 230 W Storage Temperature TSTG -55 to +150 °C Tj -55 to +150 °C Symbol Max Unit IGBT Thermal Resistance Junction -Case Rth(j-c)_IGBT 0.54 °C/W Diode Thermal Resistance Junction -Case Rth(j-c)_Diode 1.5 °C/W Continuous Forward Current (TC = 100 °C), limited by Tjmax Operating Junction Temperature Thermal Resistance
Parameter Typical Part Marking Internal Circuit
2 MFR’S
TRADEMARK W30N60H3 DEVICE CODE YYYYYYY LOT ID:
1ST CHARACTER INDICATES PRODUCTION LINE
2ND CHARACTER INDICATES GRADE
3RD CHARACTER INDICATES YEAR OF MANUFACTURE
4TH CHARACTER INDICATES MONTH OF MANUFACTURE …