Datasheet IKW30N60T - Infineon IGBT, N, 600 V, 30 A, TO-247

Infineon IKW30N60T

Part Number: IKW30N60T

Detailed Description

Manufacturer: Infineon

Description: IGBT, N, 600 V, 30 A, TO-247

Docket:
TrenchStop® Series
IKW30N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
· · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5µs Designed for : - Frequency Converters - Uninterruptible Power Supply ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 30A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking K30T60 Package PG-TO-247-3-21
C

Specifications:

Transistor Type: IGBT
DC Collector Current: 60 A
Collector Emitter Voltage Vces: 2.05 V
Power Dissipation Max: 187 W
Collector Emitter Voltage V(br)ceo: 600 V
Operating Temperature Range: -40°C to +175°C
Transistor Case Style: TO-247
Current Ic Continuous a Max: 25 A
Number of Transistors: 1
Package / Case: TO-247
Power Dissipation: 187 W
Termination Type: Through Hole
Transistor Polarity: N Channel
Voltage Vces: 600 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5
Fischer Elektronik - WLPG 02