Datasheet 1MBI600S-120 - Fuji Electric IGBT MODULE, 1200 V, 600 A

Detailed Description

Manufacturer: Fuji Electric

Description: IGBT MODULE, 1200 V, 600 A

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This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.


Specifications:

• Transistor Type: IGBT Module
• DC Collector Current: 900 A
• Collector Emitter Voltage Vces: 2.6 V
• Power Dissipation Max: 4.15kW
• Collector Emitter Voltage V(br)ceo: 1200 V
• Transistor Case Style: M138
• Current Ic @ Vce Sat: 600 A
• Current Ic Continuous a Max: 900 A
• Current Temperature: 25°C
• External Depth: 80 mm
• External Length / Height: 35 mm
• External Width: 110 mm
• Fall Time tf: 300 ns
• Full Power Rating Temperature: 25°C
• Isolation voltage: 2500 V
• Junction Temperature Tj Max: 150°C
• Number of Transistors: 1
• Package / Case: M138
• Power Dissipation: 4150 W
• Power Dissipation Pd: 4150 W
• Pulsed Current Icm: 1800 A
• Rise Time: 600 ns
• Termination Type: Screw
• Transistor Polarity: N Channel
• Voltage Vces: 1200 V
• Weight: 0.5kg

RoHS: Yes

Other Names:

1MBI600S120, 1MBI600S 120