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Silicon NPN Power Transistors in TO-220 package
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A ・ DESCRIPTION
・With TO-220C package
・High voltage;high speed
・High power dissipation
APPLICATIONS
・Switching mode power supply
PINNING
PIN DESCRIPTION 1 Base 2 Collector;connected to
mounting base 3 Emitter Absolut maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS
BUT56 VCBO Collector-base voltage 400
Open base BUT56A
VEBO Emitter-base voltage V
1000 BUT56
Collector-emitter voltage UNIT 800
Open emitter BUT56A VCEO VALUE V
450 Open collector 6 V IC Collector current 8 A ICM Collector current-peak 10 A IBM Base current-peak 4 A Ptot Total power dissipation 100 W TC=25℃ Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 1.25 K/W THERMAL CHARACTERISTICS
SYMBOL
Rth j-c PARAMETER
Thermal resistance junction to mounting case Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS
BUT56 V(BR)CEO Collector-emitter
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