Datasheet Nisshinbo NT9003HDAE4S-ES

Datasheet NT9003HDAE4S
Diode for 1mW Class Rectifier
FEATURES
High reverse voltage*: 20 V
Low forward voltage:
0.1 V typ. @ IF = 4 µA
Low reverse leakage current: 1.0 µA typ. @ VR = 2 V
Low series resistance: 55Ω typ.
@ VF = 0.85 ± 0.01 V
⚫ Low total capacitance: 0.03 pF typ.
@ VR = 2 V, f = 100 MHz
⚫ Package size:
1.2 x 1.2 mm typ.
t = 0.427 mm max.
⚫ RoHS compliant, Halogen free, MSL1
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⚫ GENERAL DESCRIPTION
The NT9003HDAE4S is a 1 mW-class rectifier diode
optimized for rectifier circuits in microwave WPT
operating in the 920 MHz, 2.4 GHz, and 5.7 GHz
bands. …