N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET ZVNL110A ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on)=3Ω
* Low threshold voltage
D
G S E-Line
TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Continuous Drain Current at T amb=25°C ID 320 mA Pulsed Drain Current I DM 6 A Gate Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 700 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. Drain-Source Breakdown
Voltage BV DSS 100 Gate-Source Threshold
Voltage V GS(th) 0.75 Gate-Body Leakage
Zero Gate Voltage Drain
Current MAX. UNIT CONDITIONS.
V I D=1mA, V GS=0V 1.5 V ID=1mA, V DS= V GS I GSS 100 nA V GS=± 20V, V DS=0V I DSS 10
500 µA
µA V DS=100 V, V GS=0
V DS=80 V, V GS=0V, T=125°C
(2) On-State Drain Current(1) I D(on) Static Drain-Source On-State
Resistance (1) R DS(on) 750 Forward Transconductance
(1)(2) g fs Input Capacitance (2) C iss 75 pF Common Source Output
Capacitance (2) C oss 25 pF Reverse Transfer Capacitance …
