Datasheet Ampleon CLF09H4LS800PU

ManufacturerAmpleon
SeriesCLF09H4LS800P
Part NumberCLF09H4LS800PU

800 W Internally pre-matched GaN HEMT in SOT-1214B package

Datasheets

Brochure "RF power application reports for ISM, broadcast, navigation and safety radio applications"
PDF, 3.5 Mb, Language: en, File uploaded: Sep 28, 2026, Pages: 22
Application Catalog - RF power solutions for MultiMarket / September 2026 / Advancing society through RF
Extract from the document

Detailed Description

The CLF09H4LS800P is a 800 W internally pre-matched RF GaN HEMT power transistor that is usable at frequencies from 902 MHz to 928 MHz.

Parameter Value
Manufacturer Ampleon
Type RF GaN HEMT, internally pre-matched
Technology GaN-on-SiC
Operating frequency 902–928 MHz
Output power 800 W
Supply voltage 50 V
Drain efficiency Up to 81.8% CW
Power gain Up to 17.4 dB at 928 MHz
Package ACC-780 / SOT1214B
Mounting High-power RF package

Model Line

Series: CLF09H4LS800P (2)