Datasheet JX Semiconductor JX4S0150R330M

ManufacturerJX Semiconductor
SeriesJX4S0150R330M
Part NumberJX4S0150R330M
Datasheet JX Semiconductor JX4S0150R330M

3300V SiC N-Channel MOSFET in TO-247 package

Datasheets

Datasheet JX4S0150R330M
PDF, 652 Kb, Language: en, File uploaded: Oct 7, 2026, Pages: 7
3300V SiC N-Channel MOSFET in TO-247 package
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Detailed Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits includehighest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

Manufacturer's Classification

  • Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor