Datasheet JX Semiconductor JX4S0150R330M
| Manufacturer | JX Semiconductor |
| Series | JX4S0150R330M |
| Part Number | JX4S0150R330M |

3300V SiC N-Channel MOSFET in TO-247 package
Datasheets
Datasheet JX4S0150R330M
PDF, 652 Kb, Language: en, File uploaded: Oct 7, 2026, Pages: 7
3300V SiC N-Channel MOSFET in TO-247 package
3300V SiC N-Channel MOSFET in TO-247 package
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Detailed Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits includehighest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Manufacturer's Classification
- Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor